Applied Materials Introduces EUV Lithography Photomask Etch System
Applied Materials has unveiled its new Applied Centura Tetra EUV Advanced Reticle Etch system, addressing a key manufacturing challenge for EUV lithography adoption.
Santa Clara, California – Applied Materials, Inc. has introduced its Applied Centura Tetra EUV Advanced Reticle Etch system, designed to overcome a significant hurdle in the adoption of EUV (Extreme Ultraviolet) lithography. The system aims to enable the precise etching of EUV photomasks with nanometer-level accuracy and improved defect performance, a critical step for manufacturing next-generation semiconductor chips.
The new technology addresses the unique challenges of etching new materials and complex layer stacks required for EUV masks. Unlike conventional masks that transmit light, EUV lithography uses a 13.5nm wavelength where materials are opaque, necessitating reflective mirror layers to project patterns. The Tetra EUV system is engineered to meet stringent specifications for pattern accuracy, surface finish, and defectivity essential for achieving high yields in reflective-mode lithography.
Applied Materials reports that multiple systems have already been installed at leading mask makers. The company stated it continues to invest in technologies supporting its customers and enabling next-generation design nodes, anticipating that EUV lithography will accelerate the production of high-performance chips.
The Tetra EUV system is part of Applied Materials' comprehensive suite of solutions for optimizing photomask and lithography operations. The company also provides extensive global service and support to maximize system uptime for its customers.