GaNrich expands gallium nitride power device portfolio to 40–1200V range
Taiwan-based GaNrich Semiconductor has scaled its gallium nitride technology platform, aiming to provide alternatives to silicon and silicon carbide components across diverse industrial applications.
GaNrich Semiconductor Corporation has announced an expansion of its gallium nitride (GaN) power device portfolio, now covering a voltage range from 40V to 1200V. The company utilizes both GaN-on-Si and GaN-on-Sapphire wafer platforms to produce components for sectors including AI data centers, electric vehicles, and industrial robotics.
The expansion focuses on addressing performance limitations inherent in traditional silicon-based devices. By integrating gate drivers and offering drop-in replacements for standard components, GaNrich aims to simplify circuit design for its customers. The company is also developing a 1200V bidirectional switching product, which it intends to position as a competitive alternative to silicon carbide (SiC) technology in specific power conversion architectures.
Strategically, GaNrich is positioning itself as a provider within a supply chain independent of China, coordinating its wafer manufacturing and packaging resources primarily through operations in Taiwan. The company reports that its products have already undergone validation by select global customers in the automotive and energy storage industries.