GaNrich expands gallium nitride semiconductor portfolio to 40–1200V range
Taiwan-based GaNrich Semiconductor Corporation has launched a broad range of 40–1200V gallium nitride power semiconductors aimed at AI datacenters, automotive, and industrial applications.
GaNrich Semiconductor Corporation, a developer based in Taiwan, has announced an expanded portfolio of gallium nitride (GaN) power semiconductors spanning 40V to 1200V. The move intends to address the increasing demand for high-efficiency power conversion in sectors including artificial intelligence (AI) datacenters, electric vehicles (EVs), and robotics.
The company utilizes both GaN-on-Si and GaN-on-Sapphire platforms to deliver devices that provide higher switching speeds and lower parasitic capacitance compared to traditional silicon components. GaNrich claims its products are designed for plug-in compatibility with existing silicon designs, allowing manufacturers to upgrade performance without requiring complete system redesigns.
A key focus for GaNrich is offering an alternative to current supply chain dependencies. By coordinating manufacturing and packaging operations in Taiwan and collaborating with international partners, the firm seeks to provide a competitive, non-China-centric supply chain for European and North American customers.
Looking ahead, GaNrich plans to introduce a 1200V bidirectional switch, which aims to support single-stage power conversion architectures. Selected components from the new portfolio have already undergone customer validation, particularly within the automotive and industrial energy storage sectors.