Kioxia Starts Sampling of 9th Generation 1 Tb BiCS FLASH NAND Memory
Kioxia has announced the commencement of sample shipments for its 1 terabit (Tb) Triple-Level Cell (TLC) memory device, featuring the company's ninth-generation BiCS FLASH 3D NAND technology.
Japanese memory technology firm Kioxia has announced it has begun shipping samples of its 1 terabit (Tb) Triple-Level Cell (TLC) memory device, which utilizes the company's ninth-generation BiCS FLASH 3D NAND technology. This new memory chip incorporates a 230-layer stacking architecture.
Unlike previous BiCS9 512Gb TLC samples, the new 1 Tb TLC chip employs the same CMOS technology as the upcoming BiCS10 generation. This enables a NAND interface speed of 4.8 Gb/s. Kioxia states that the ninth-generation BiCS FLASH is designed to support applications requiring high performance and energy efficiency for medium-to-low capacity storage needs.
The company also plans to develop 332-layer BiCS FLASH products to address future demands for high-capacity, high-performance solutions.