MemSilicon completes 1Gb RRAM chip "MountTai 2026"

Chinese semiconductor company MemSilicon has announced the completion of fabrication for its first 1 gigabit (Gb) Resistive Random-Access Memory (RRAM) chip, named "MountTai 2026". The chip employs a 1T4R memory structure and is manufactured using a 28-nanometer (nm) CMOS process.

The company stated that the chip achieves a storage density of 30 megabits per square millimeter (Mb/mm²). The "MountTai 2026" chip also integrates on-chip error correction circuitry and offers an access latency of less than 20 nanoseconds (ns). Chip validation is currently underway.

MemSilicon, established in May 2024, focuses on developing advanced non-volatile memory solutions to address computational bottlenecks. The company has secured significant funding in two financing rounds since its inception.

The successful fabrication of "MountTai 2026" represents a key advancement for MemSilicon, moving high-density memory technology from research toward product realization at the gigabit scale.