Ningbo VET Energy Produces SiC Cantilever Paddle for Semiconductor Manufacturing

Chinese company Ningbo VET Energy Technology Co., Ltd. is producing a silicon carbide (SiC) cantilever paddle, aimed at improving the performance of Low-Pressure Chemical Vapor Deposition (LPCVD) furnaces used in semiconductor manufacturing. The component is critical for modern semiconductor fabrication processes that require smaller device geometries, higher wafer throughput, and stricter contamination control.

The cantilever paddle supports semiconductor wafers within high-temperature processing environments. The choice of SiC as the material is significant, directly impacting process stability and repeatability. SiC's properties, including high thermal conductivity (120–200 W/m·K), stability at temperatures exceeding 1600°C, and resistance to corrosive process chemistries, make it suitable for these demanding applications.

LPCVD processes, such as polysilicon, silicon nitride, and low-pressure oxide deposition, typically operate between 500°C and 900°C. In this environment, the paddle's structural integrity is essential to ensure stable wafer spacing and prevent misalignment. SiC's thermal conductivity also aids in minimizing temperature gradients within the furnace, contributing to uniform film deposition.

Furthermore, the dense structure and corrosion resistance of SiC significantly reduce particle generation compared to traditional materials. Particles are a major cause of yield loss in semiconductor manufacturing, making low-particle components like the SiC paddle crucial for improving production efficiency.

Ningbo VET Energy specializes in advanced graphite and silicon carbide components for semiconductor manufacturing. The company also produces other related parts, such as SiC-coated susceptors and wafer carriers, used in various semiconductor processing equipment. The increasing demand for advanced power semiconductors is expected to drive continued need for such high-purity, stable furnace components.