Silicon Carbide Coatings Enhance SiC Epitaxial Growth Processes

Ningbo VET Energy Technology Co., Ltd has developed silicon carbide (SiC)-coated graphite substrates designed to enhance the quality and lifespan of silicon carbide epitaxial growth processes. These coatings address the semiconductor industry's increasing demands, where the quality of epitaxial layers directly impacts the performance of semiconductor devices.

Epitaxial layers are grown on wafer substrates through a precision process, and their quality is critical for fabricating power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being most common. Chemical Vapor Deposition (CVD) is the primary method for growing these SiC layers. However, graphite substrates can degrade under high temperatures and corrosive gases, reducing their service life and potentially contaminating the silicon chips.

The SiC coating provides a solution by protecting the graphite. Its corrosion resistance and dense structure shield the substrate from aggressive gases. The coating's high thermal conductivity and strong adhesion to the graphite ensure it remains intact through temperature cycles. Furthermore, SiC's chemical stability in high-temperature, corrosive atmospheres extends the substrate's usability and improves yield.

According to the company, the preparation of SiC coatings is critical, as their physical and chemical properties directly affect semiconductor product yield and lifespan. Various SiC crystal forms are used for different applications, including 4H-SiC for power devices and 3C-SiC for GaN-based RF devices. Ningbo VET Energy Technology manufactures these coatings using several methods, such as the embedding method and chemical vapor deposition.