SK Hynix Confirms V10 NAND Memory With 375 Layer Stacking
SK Hynix has confirmed its new V10 NAND memory will feature 375 layer stacking and adopt wafer bonding technology. Mass production of enterprise SSDs using this technology is planned for the first half of 2027.
SK Hynix has confirmed that its next-generation V10 NAND flash memory will utilize a 375-layer stacking design, an increase from the 321 layers in its V9 product. This also marks the company's first NAND product to incorporate wafer bonding technology. The new V10 NAND is optimized for AI infrastructure environments, offering 2.5 times the performance per watt compared to the previous generation.
The company plans to begin mass production of enterprise SSDs based on V10 NAND in the first half of 2027. SK Hynix also showcased V10 1Tb TLC wafers and two finished chip samples: a 32DP 2CH model stacking 32 NAND dies, and a four-channel packaged version in a compact form factor.
Additionally, the company presented the UG500, a UFS 5.0 solution based on V9H 1Tb TLC NAND, which provides a 19% improvement in energy efficiency over UFS 4.1. LPDDR6 memory chips were also displayed.
SK Hynix also exhibited its first cost-effective PCIe Gen5 QLC SSD, the PQF02. This drive uses V9 QLC NAND and is available in 1TB and 2TB capacities, supporting M.2 form factors from 2230 to 2280.